AOB270L Datasheet, PDF (1/6 Pages) –

AOT270L/AOB270L
75V N-Channel MOSFET
General Description
The AOT270L/AOB270L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both conduction and switching power losses are minimized due
to an extremely low combination of R_DS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=6V)
75V
140A
< 2.6mΩ
< 3.0mΩ
(< 2.3mΩ^∗)
(< 2.8mΩ^∗)
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
* Surface mount package TO263
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
75
±20
140
110
560
21.5
17
120
720
500
250
2.1
1.3
-55 to 175
Typ
Max
12
15
50
60
0.25
0.3
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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