AO8814 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8814
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
Symbol
Parameter
Conditions
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSS
BV_GSO
V_GS(th)
I_D(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
I_D=250µA, V_GS=0V
V_DS=16V, V_GS=0V
V_DS=0V, V_GS=±10V
V_DS=0V, I_G=±250uA
V_DS=V_GS I_D=250µA
V_GS=4.5V, V_DS=5V
V_GS=10V, I_D=7.5A
T_J=55°C
R_DS(ON)
g_FS
V_SD
I_S
Static Drain-Source On-Resistance
V_GS=4.5V, I_D=7A
V_GS=3.6V, I_D=6A
V_GS=2.5V, I_D=6A
V_GS=1.8V, I_D=5A
Forward Transconductance
V_DS=5V, I_D=7.5A
Diode Forward Voltage
I_S=1A,V_GS=0V
Maximum Body-Diode Continuous Current
T_J=125°C
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=10V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Gate Source Charge
V_GS=4.5V, V_DS=10V, I_D=7.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=5V, V_DS=10V, R_L=1.3Ω,
R_GEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=7.5A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=7.5A, dI/dt=100A/µs}
Min
20
±12
0.5
30
10
14
11.5
13
15
20
Typ
0.71
13
18
15
16.8
19
26
30
0.74
1390
190
150
1.5
15.4
1.4
4
6.2
11
40.5
10
15
5.1
Max
1
5
10
1
16
22
18
20
24
34
1
2.5
Units
V
µA
µA
V
V
A
mΩ
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R _θJA is measured with the device mounted on 1in ² FR-4 board with 2oz. Copper, in a still air environment with T _A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R _θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The
SOA curve provides a single pulse rating.
Rev 5: Feb 2010
2/4
www.freescale.net.cn