AO8814 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8814
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AO8814 uses advanced trench technology to provide excellent RDS(ON) ^{, low gate charge and}
operation with gate voltages as low as 1.8V while retaining a 12V V_{GS(MAX) rating. It is ESD protected.}
This device is suitable for use as a uni-directiona l or bi-directional load switch, facilitated by its common-
drain configuration.
Features
V_DS (V) = 20V
I_D = 7.5 A (V_GS = 10V)
R_DS(ON) < 16mΩ (V_GS = 10V)
R_DS(ON) < 18mΩ (V_GS = 4.5V)
R_DS(ON) < 20mΩ (V_GS = 3.6V)
R_DS(ON) < 24mΩ (V_GS = 2.5V)
R_DS(ON) < 34mΩ (V_GS = 1.8V)
ESD Rating: 2500V HBM
TSSOP-8
Top View
D1
D2
D1/D2 1
S1 2
S1 3
G1 4
8 D1/D2
7 S2
6 S2
5 G2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
7.5
6
30
1.5
0.96
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
64
89
83
120
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
53
70
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn