AO3404A Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_J=25°C unless otherwise noted)
AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V
30
I_DSS
Zero Gate Voltage Drain Current
V_DS=30V, V_GS=0V
T_J=55°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS= ±20V
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=250µA
1.5
I_D(ON)
On state drain current
V_GS=4.5V, V_DS=5V
64
V_GS=10V, I_D=5.8A
R_DS(ON) Static Drain-Source On-Resistance
T_J=125°C
V_GS=4.5V, I_D=4.8A
g_FS
Forward Transconductance
VDS=5V, ID=5.8A
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g(10V)
Q_g(4.5V)
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=5.8A
V_GS=10V, V_DS=15V, R_L=2.6Ω,
R_GEN=3Ω
I_F=5.8A, dI/dt=100A/µs
I_F=5.8A, dI/dt=100A/µs
Typ
2.1
18.4
26.2
24.5
22
0.75
373
67
41
1.8
7.1
3.3
1.4
1.7
4.5
2.4
14.8
2.5
10.5
4.5
Max Units
V
1
µA
5
100 nA
2.6
V
A
25
mΩ
36
35 mΩ
S
1
V
2.5
A
448 pF
pF
pF
2.8
Ω
11 nC
nC
nC
nC
6.5 ns
ns
ns
ns
12.6 _ns
nC
A: The value of R _θJA is measured with the device mounted on 1in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R _θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤ 10s thermal resistance rating.
Rev4 May.2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/4
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