AO3404A Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3404A uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
V_DS (V) = 30V
I_D = 5.8A
R_DS(ON) < 25mΩ
R_DS(ON) < 35mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A,F
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
5.8
4.9
64
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
65
85
90
125
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn