AO8808 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO8808
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8808 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V_GS(MAX) rating. This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain configuration. Standard Product AO8808 is Pb-free (meets
ROHS & Sony 259 specifications). AO8808L is a GreenProduct ordering option. AO8808 and AO8808L are electrically
identical.
Features
V_DS (V) = 20V
I_D = 8A (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 10V)
R_DS(ON) < 15mΩ (V_GS = 4.5V)
R_DS(ON) < 20mΩ (V_GS = 2.5V)
R_DS(ON) < 28mΩ (V_GS = 1.8V)
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
8
6.3
30
1.4
1
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
73
96
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
75
Units
°C/W
°C/W
°C/W
1/4
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