GP2S60_05 Datasheet, PDF (8/15 Pages) Sharp Electrionic Components – SMT, Detecting Distance : 0.5mm Phototransistor Output, Compact Refl ective Photointerrupter

GP2S60
■ Design Considerations
● Design guide
1) Regarding to prevention of malfunction
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Distance characteristic
The distance between the photointerrupter and the object to be detected shall be determined the distance
by referencing Fig.10 "Relative collector current vs. distance".
3) For wiring on a mounting PCB
To avoid possibility for short, please do not apply pattern wiring on the back side of the device.
4) Regarding to mounting this product
There is a possibility that the opaque molded resin portion may have a crack by force at mounting etc.
Please use this product after well confirmation of conditions in your production line.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Light detector (qty. : 1)
Category
Material
Phototransister
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
930
Sensitivity
wavelength (nm)
700 to 1 200
Response time (μs)
20
• Light emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Epoxy resin
Black polyphenylene sulfide
PCB
Glass epoxy resin
Maximum light emitting
wavelength (nm)
950
Lead frame plating
Au plating
I/O Frequency (MHz)
0.3
Sheet No.: D3-A02101EN
8