GP2S60_05 Datasheet, PDF (3/15 Pages) Sharp Electrionic Components – SMT, Detecting Distance : 0.5mm Phototransistor Output, Compact Refl ective Photointerrupter

■ Absolute Maximum Ratings
Parameter
Forward current
Input Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
∗1_{Soldering temperature}
∗_{1 For 5s or less}
Symbol
I_F
V_R
P_D
V_CEO
V_ECO
I_C
P_C
P_tot
T_opr
T_stg
T_sol
(T_a=25˚C)
Rating
Unit
50
mA
6
V
75
mW
35
V
6
V
20
mA
75
mW
100
mW
−25 to +85 ˚C
−40 to +100 ˚C
260
˚C
GP2S60
■ Electro-optical Characteristics
Parameter
Symbol
Condition
Input
Forward voltage
Reverse current
V_F
I_F=20mA
I_R
V_R=6V
Output
Transfer
charac-
teristics
Collector dark current
∗2 _{Collector Current}
∗3 _{Leak current}
Response time
Rise time
Fall time
I_CEO
I_C
I_LEAK
t_r
t_f
V_CE=20V
I_F=4mA, V_CE=2V
I_F=4mA, V_CE=2V
V_CE=2V, I_C=100μA,
R_L=1kΩ, d=1mm
∗_{2 The condition and arrangement of the reflective object are shown below.}
The rank splitting of collector current (IC) shall be executed according to the table below.
Rank
Collector current, IC [μA]
(IF=4mA, VCE=2V)
A
40 to 80
B
65 to 130
∗_{3 Without reflective object.}
● Test Condition and Arrangement for Collector Current
Aluminum evaporation
d=1mm
glass plate
MIN.
−
−
−
40
−
−
−
TYP.
1.2
−
1
85
−
20
20
(T_a=25˚C)
MAX. Unit
1.4
V
10
μA
100 nA
130 μA
500 nA
100
100
μs
Sheet No.: D3-A02101EN
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