GP1S51VJ000F Datasheet, PDF (8/12 Pages) Sharp Electrionic Components – Gap : 3mm Slit : 0.5mm Phototransistor Output, Case package Transmissive Photointerrupter

GP1S51VJ000F
■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
4mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Phototransistor
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
800
Sensitivity
wavelength (nm)
400 to 1 200
Response time (μs)
3
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
Maximum light emitting
wavelength (nm)
950
• Material
Case
Black NORYL resin
Lead frame plating
Solder dip. (Sn−3Ag−0.5Cu)
I/O Frequency (MHz)
0.3
Sheet No.: D3-A02401EN
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