GP1S25J0000F Datasheet, PDF (7/11 Pages) Sharp Electrionic Components – SMT, Gap : 1.6mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter

GP1S25J0000F
■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 1.6mm or more from the top of elements.
(Example)
1.6mm or more
1.6mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Phototransistor
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
930
Sensitivity
wavelength (nm)
700 to 1 200
Response time (μs)
20
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Black polyphernylene
sulfide resin (UL94 V-0)
Lead frame
42Alloy
Maximum light emitting
wavelength (nm)
950
I/O Frequency (MHz)
0.3
Sheet No.: D3-A00102EN
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