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GP2S700HCP Datasheet, PDF (6/13 Pages) Sharp Electrionic Components – SMT, Detecting Distance : 3mm Phototransistor Output, Compact Refl ective Photointerrupter
GP2S700HCP
■ Design Considerations
● Design guide
1) Regarding to prevation of malfunction
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face
to the external light. Also, if some other electronic components are located close to this device, false
operation may occur.
(The light reflection caused by the other components may slip into the photodetecting portion of the
device and if may cause false operation.)
2) Distance characteristic
The distance between the photointerrupter and the object to be detected shall be determined the distance
by referencing Fig.8 "Relative collector current vs. distance".
3) For wiring on a mounting PCB
To avoid possibility for short, please do not apply pattern wiring on the back side of the device.
4) Regarding to mounting this product
There is a possibility that the opaque molded resin portion may have a crack by force at mounting etc.
Please use this product after well confirmation of conditions in your production line.
And please confirm the mounting workability beforehand when using the automatic mounting machine.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Light detector (qty. : 1)
Category
Material
Phototransister
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
930
Sensitivity
wavelength (nm)
700 to 1 200
Response time (μs)
20
• Light emitter (qty. : 1)
Category
Infrared light emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Black epoxy resin
PCB
Glass epoxy resin
Maximum light emitting
wavelength (nm)
950
Lead frame plating
Au plating
I/O Frequency (MHz)
0.3
Sheet No.: D3-A02201EN
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