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LH28F800BJE-PBTL70 Datasheet, PDF (33/47 Pages) Sharp Electrionic Components – 8M (x8/x16) Flash Memory
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LHF80J47
31
6.2.3 DC Characteristics
Sym.
Parameter
ILI
Input Load Current
ILO
Output Leakage Current
ICCS
VCC Standby Current
DC Characteristics
Notes
VCC=2.97V-3.63V
Typ.
Max.
1
±0.5
1
±0.5
1,3,6
2
15
0.2
2
ICCAS VCC Auto Power-Save Current
1,5,6
2
15
ICCD VCC Reset Power-Down Current
1
2
15
ICCR
VCC Read Current
1,6
15
25
30
ICCW VCC Word/Byte Write or Set Lock-
1,7
5
17
Bit Current
5
12
ICCE
VCC Block Erase, Full Chip Erase or
1,7
4
17
Clear Block Lock-Bits Current
4
12
ICCWS
ICCES
ICCWS
VCC Word/Byte Write or
Block Erase Suspend Current
VCCW Standby or Read Current
1,2
1
6
1
±2
±15
ICCWR
10
200
ICCWAS VCCW Auto Power-Save Current
1,5,6
0.1
5
ICCWD VCCW Reset Power-Down Current
1
0.1
5
ICCWW VCCW Word/Byte Write or Set Lock- 1,7
12
40
Bit Current
30
ICCWE VCCW Block Erase, Full Chip Erase
1,7
8
25
or Clear Block Lock-Bits Current
20
ICCWWS VCCW Word/Byte Write or
ICCWES Block Erase Suspend Current
1
10
200
Test
Unit
Conditions
µA
VCC=VCCMax.
VIN=VCC or GND
µA
VCC=VCCMax.
VOUT=VCC or GND
CMOS Level Inputs
µA VCC=VCCMax.
CE#=RP#=VCC±0.2V
TTL Level Inputs
mA VCC=VCCMax.
CE#=RP#=VIH
CMOS Level Inputs
µA VCC=VCCMax.
CE#=GND±0.2V
µA
RP#=GND±0.2V
IOUT(RY/BY#)=0mA
CMOS Level Inputs
mA VCC=VCCMax., CE#=GND
f=5MHz, IOUT=0mA
TTL Level Inputs
mA VCC=VCCMax., CE#=GND
f=5MHz, IOUT=0mA
mA VCCW=2.97V-3.63V
mA VCCW=11.7V-12.3V
mA VCCW=2.97V-3.63V
mA VCCW=11.7V-12.3V
mA CE#=VIH
µA VCCW≤VCC
µA VCCW>VCC
CMOS Level Inputs
µA VCC=VCCMax.
CE#=GND±0.2V
µA RP#=GND±0.2V
mA VCCW=2.97V-3.63V
mA VCCW=11.7V-12.3V
mA VCCW=2.97V-3.63V
mA VCCW=11.7V-12.3V
µA VCCW=VCCWH1/2
Rev. 1.27
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