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LH28F400SUB Datasheet, PDF (20/34 Pages) Sharp Electrionic Components – 4M (512K × 8, 256K × 16) Flash Memory
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LH28F400SUB-Z0
4M (512K × 8, 256K × 16) Flash Memory
DC Characteristics
VCC = 3.3 V ± 0.3 V, TA = -20°C to +85°C (Erase/Write)
VCC = 2.7 V ~ 3.6 V, TA = -20°C to +85°C (Read)
SYMBOL
PARAMETER
IIL
Input Load Current
ILO Output Leakage Current
TYP.
4
ICCS VCC Standby Current
0.3
ICCD
VCC Deep Power-Down
Current
0.2
ICCR1 VCC Read Current
ICCR2 VCC Read Current
10
ICCW VCC Write Current
8
ICCE VCC Block Erase Current 6
ICCES
VCC Erase Suspend
Current
3
IPPS VPP Standby Current
±1
IPPD
VPP Deep Power-Down
Current
0.2
MIN.
MAX. UNITS
TEST CONDITIONS
NOTE
±1
µA VCC = VCC MAX., VIN = VCC or GND
1
±10
µA VCC = VCC MAX., VIN = VCC or GND
1
VCC = VCC MAX.,
15
µA CE», RP » = VCC ±0.2 V
BYTE = VCC ±0.2 V or GND ±0.2 V 1, 4
VCC = VCC MAX.,
4
mA CE», RP » = VIH
BYTE = VIH or VIL
8
µA RP» = GND ±0.2 V
1
VCC = VCC MAX.,
CMOS: CE » = GND ±0.2 V
BYTE = GND ±0.2 V or VCC ±0.2 V
35
mA Inputs = GND ±0.2 V or VCC ±0.2 V 1, 3, 4
TTL: CE » = VIL,
BYTE = VIH or VIL
Inputs = VIL or VIH
f = 8 MHz, IOUT = 0 mA
VCC = VCC MAX.,
CMOS: CE » = GND ±0.2 V
BYTE = VCC ±0.2 V or GND ±0.2 V
20
mA Inputs = GND ±0.2 V or VCC ±0.2 V 1, 3, 4
TTL: CE = VIL,
BYTE = VIH or VIL
Inputs = VIL or VIH
f = 4 MHz, IOUT = 0 mA
16 mA Word/Byte Write in Progress
1
12 mA Block Erase in Progress
1
6
mA CE» = VIH
1, 2
Block Erase Suspended
±10
µA VPP ≤ VCC
1
8
µA RP» = GND ±0.2 V
1
20
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