6N135 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – IRED & PHOTO IC (DIGITAL LOGIC ISOLATION)

6N135/6N136
s Electro-optical Characteristics
( Ta = 0 to + 70˚C unless otherwise specified )
Parameter
6N135
*5_{Current transfer}
6N136
ratio
6N135
6N136
Logic ( 0) output voltage
Logic ( 1) output current
Logic ( 0) supply current
Symbol
CTR ( 1 )
CTR ( 1 )
CTR ( 2 )
CTR ( 2 )
V OL
I OH (1)
I OH (2)
I OH (3)
I CCL
Logic ( 1) supply current
I CCH (1)
I CCH (2)
Input forward voltage
Input forward voltage
temperature coefficient
VF
∆VF / ∆T a
Input reverse voltage
BV R
Input capacitance
C IN
*6_{Leak current}
(input-output )
I I-O
*6_{Isolation resistance}
(input-output )
R I-O
*6_{Capacitance ( input-output )}
CI-O
Transistor current
amplification factor
h FE
Conditions
Ta = 25 ˚C, I F = 16mA
VO = 0.4V, V CC = 4.5V
IF = 16mA, V O = 0.5V
VCC = 4.5V
*7_{IF = 16mA, V CC = 4.5V}
T a = 25 ˚C, I F = 0
VCC = VO = 5.5V
T a = 25 ˚C, I F = 0
V CC = VO = 15V
IF = 0, VCC = VO = 15V
IF = 16mA, VCC = 15V
VO = open
T a = 25 ˚C, VCC = 15V
VF = open, I O = 0
V CC = 15V
VO = open, I F = 0
T a = 25˚C, I F = 16mA
IF = 16mA
T a = 25˚C, I R = 10 µ A
VF = 0, f = 1MHz
T a = 25 ˚C, 45 % RH, t = 5s
V I-O = 3kVDC
V I-O = 500VDC
f = 1MHz
VO = 5V, I O = 3mA
MIN. TYP. MAX. Unit
7.0
40
-
%
19
40
-
%
5.0
43
-
%
15
43
-
%
-
0.1
0.4
V
-
3.0
500
nA
-
0.01 1.0
µA
-
-
50
µA
-
200
-
µA
-
0.02 1.0
µA
-
-
2.0
µA
-
1.7 1.95
V
-
- 1.9
- mV/ ˚C
5.0
-
-
V
-
60
-
pF
-
-
1.0
µA
-
10¹²
-
Ω
-
0.6
-
pF
-
70
-
*5 Current transfer ratio is the ratio of input current and output
current expressed in % .
*6 Measured as 2-pin element ( Short 1, 2, 3, 4 )
*7 6N135 : IO = 1.1mA, 6N136 : IO = 2.4mA
Note ) Typical volue : at Ta = 25 ˚C