LH28F800SG-L Datasheet, PDF (1/45 Pages) Sharp Electrionic Components – 8 M-bit (512 kB x 16) SmartVoltage Flash Memories

LH28F800SG-L/SGH-L (FOR TSOP, CSP)
LH28F800SG-L/SGH-L
(FOR TSOP, CSP)
DESCRIPTION
The LH28F800SG-L/SGH-L flash memories with
SmartVoltage technology are high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications. The LH28F800SG-L/SGH-L
can operate at VCC = 2.7 V and VPP = 2.7 V. Their
low voltage operation capability realizes longer
battery life and suits for cellular phone application.
Their symmetrically-blocked architecture, flexible
voltage and enhanced cycling capability provide for
highly flexible component suitable for resident flash
arrays, SIMMs and memory cards. Their enhanced
suspend capabilities provide for an ideal solution for
code + data storage applications. For secure code
storage applications, such as networking, where
code is either directly executed out of flash or
downloaded to DRAM, the LH28F800SG-L/SGH-L
offer three levels of protection : absolute protection
with VPP at GND, selective hardware block locking,
or flexible software block locking.These alternatives
give designers ultimate control of their code security
needs.
FEATURES
• SmartVoltage technology
– 2.7 V, 3.3 V or 5 V VCC
– 2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time
LH28F800SG-L70/SGH-L70
– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/
85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V)
LH28F800SG-L10/SGH-L10
– 100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/
120 ns (2.7 to 3.0 V)
8 M-bit (512 kB x 16) SmartVoltage
Flash Memories
• Enhanced automated suspend options
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
• Enhanced data protection features
– Absolute protection with VPP = GND
– Flexible block locking
– Block erase/word write lockout during power
transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
– Sixteen 32 k-word erasable blocks
• Enhanced cycling capability
– 100 000 block erase cycles
– 1.6 million block erase cycles/chip
• Low power management
– Deep power-down mode
– Automatic power saving mode decreases ICC
in static mode
• Automated word write and block erase
– Command user interface
– Status register
• ETOX^TM∗ V nonvolatile flash technology
• Packages
– 48-pin TSOP TypeI (TSOP048-P-1220)
Normal bend/Reverse bend
– 48-ball CSP(FBGA048-P-0808)
∗ ETOX is a trademark of Intel Corporation.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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