LH28F320S3TD-L10 Datasheet, PDF (1/51 Pages) Sharp Electrionic Components – 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory

LH28F320S3TD-L10
LH28F320S3TD-L10 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank)
Smart 3 Dual Work Flash Memory
DESCRIPTION
The LH28F320S3TD-L10 Dual Work flash memory
with Smart 3 technology is a high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications, having high programming
performance is achieved through highly-optimized
page buffer operations. Its symmetrically-blocked
architecture, flexible voltage and enhanced cycling
capability provide for highly flexible component
suitable for resident flash arrays, SIMMs and
memory cards. Its enhanced suspend capabilities
provide for an ideal solution for code + data storage
applications. For secure code storage applications,
such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the
LH28F320S3TD-L10 offers three levels of
protection : absolute protection with VPP at GND,
selective hardware block locking, or flexible
software block locking. These alternatives give
designers ultimate control of their code security
needs. LH28F320S3TD-L10 is conformed to the
flash Scalable Command Set (SCS) and the
Common Flash Interface (CFI) specification which
enable universal and upgradable interface, enable
the highest system/device data transfer rates and
minimize device and system-level implementation
costs.
FEATURES
• Smart 3 Dual Work technology
– 2.7 V or 3.3 V VCC
– 2.7 V, 3.3 V or 5 V VPP
– Capable of performing erase, write and read
for each bank independently (Impossible to
perform read from both banks at a time).
• High-speed write performance
– Two 32-byte page buffers/bank
– 2.7 µs/byte write transfer rate
• Common Flash Interface (CFI)
– Universal & upgradable interface
• Scalable Command Set (SCS)
• High performance read access time
– 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
– Write suspend to read
– Block erase suspend to write
– Block erase suspend to read
• Enhanced data protection features
– Absolute protection with VPP = GND
– Flexible block locking
– Erase/write lockout during power transitions
• SRAM-compatible write interface
• User-configurable x8 or x16 operation
• High-density symmetrically-blocked architecture
– Sixty-four 64 k-byte erasable blocks
• Enhanced cycling capability
– 100 000 block erase cycles
– 3.2 million block erase cycles/bank
• Low power management
– Deep power-down mode
– Automatic power saving mode decreases Icc
in static mode
• Automated write and erase
– Command user interface
– Status register
• ETOX^TM∗ V nonvolatile flash technology
• Package
– 56-pin TSOP Type I (TSOP056-P-1420)
Normal bend
∗ ETOX is a trademark of Intel Corporation.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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