LH28F008SC-V Datasheet, PDF (1/40 Pages) Sharp Electrionic Components – 8 M-bit (1 MB x 8) Smart 5

LH28F008SC-V/SCH-V
LH28F008SC-V/SCH-V
8 M-bit (1 MB x 8) Smart 5
Flash Memories
DESCRIPTION
The LH28F008SC-V/SCH-V flash memories with
Smart 5 technology are high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications. Their symmetrically-blocked
architecture, flexible voltage and enhanced cycling
capability provide for highly flexible component
suitable for resident flash arrays, SIMMs and memory
cards. Their enhanced suspend capabilities provide
for an ideal solution for code + data storage
applications. For secure code storage applications,
such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the
LH28F008SC-V/SCH-V offer three levels of
protection : absolute protection with VPP at GND,
selective hardware block locking, or flexible software
block locking. These alternatives give designers
ultimate control of their code security needs.
FEATURES
• Smart 5 technology
– 5 V VCC
– 5 V or 12 V VPP
• High performance read access time
LH28F008SC-V85/SCH-V85
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
LH28F008SC-V12/SCH-V12
– 120 ns (5.0±0.5 V)
• Enhanced automated suspend options
– Byte write suspend to read
– Block erase suspend to byte write
– Block erase suspend to read
• Enhanced data protection features
– Absolute protection with VPP = GND
– Flexible block locking
– Block erase/byte write lockout during power
transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
– Sixteen 64 k-byte erasable blocks
• Enhanced cycling capability
– 100 000 block erase cycles
– 1.6 million block erase cycles/chip
• Low power management
– Deep power-down mode
– Automatic power saving mode decreases ICC
in static mode
• Automated byte write and block erase
– Command user interface
– Status register
• ETOX^TM∗ V nonvolatile flash technology
• Packages
– 40-pin TSOP Type I (TSOP040-P-1020)
Normal bend/Reverse bend
– 44-pin SOP (SOP044-P-0600)
– 48-ball CSP (FBGA048-P-0608)
∗ _{ETOX is a trademark of Intel Corporation.}
COMPARISON TABLE
VERSIONS
OPERATING TEMPERATURE
LH28F008SC-V
LH28F008SCH-V
0 to +70˚C
–25 to +85˚C
DC CHARACTERISTICS
VCC deep power-down current (MAX.)
10 µA
20 µA
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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