LH28F004SU-Z1 Datasheet, PDF (1/32 Pages) Sharp Electrionic Components – 4M (512K × 8) Flash Memory

LH28F004SU-Z1
4M (512K × 8) Flash Memory
FEATURES
• 512K × 8 Word Configuration
• 5 V Write/Erase Operation (5 V V_PP)
– No Requirement for DC/DC Converter
to Write/Erase
• 100 ns Maximum Access Time
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
– Command User Interface
– Status Register
– RY /» BY» Status Output
• System Performance Enhancement
– Erase Suspend for Read
– Two-Byte Write
– Full Chip Erase
• Data Protection
– Hardware Erase/Write Lockout during
Power Transitions
– Software Erase/Write Lockout
• Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect
Set/Reset)
• 5 µA (Typ.) I_CC in CMOS Standby
• 0.2 µA (Typ.) Deep Power-Down
• State-of-the-Art 0.55 µm ETOX™ Flash
Technology
• 40-pin, 1.2 mm × 10 mm × 20 mm TSOP
(Type I) Package
40-PIN TSOP
TOP VIEW
A₁₆
1
A₁₅
2
A₁₄
3
A₁₃
4
A₁₂
5
A₁₁
6
A₉
7
A₈
8
WE 9
RP 10
V_PP 11
RY/BY 12
A₁₈ 13
A₇ 14
A₆ 15
A₅ 16
A₄ 17
A₃ 18
A₂ 19
A₁ 20
40 A₁₇
39 GND
38 NC
37 NC
36 A₁₀
35 DQ₇
34 DQ₆
33 DQ₅
32 DQ₄
31 V_CC
30 V_CC
29 NC
28 DQ₃
27 DQ₂
26 DQ₁
25 DQ₀
24 OE
23 GND
22 CE
21 A₀
28F004SUT-Z1-1
Figure 1. TSOP Configuration
1