SGM3799 Datasheet, PDF (5/12 Pages) SG Micro Corp – DPDT Analog Switch

SGM3799
0.5Ω, Low Voltage
Dual, DPDT Analog Switch
ELECTRICAL CHARACTERISTICS
(V+ = +2.7 to +3.6V, GND = 0V, VIH = +1.5 V, VIL = +0.4V, Full = -40℃ to +85℃. Typical values are at V+ = +3.0V, TA = +25℃, unless
otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP MIN TYP MAX UNITS
ANALOG SWITCH
Analog Signal Range
VNO, VNC, VCOM
Full
0
V+
V
On-Resistance
R_ON
V+ = 2.7V, VNO or VNC = 1V,
I_COM = -100mA, Test Circuit 1
+25℃
Full
0.6 0.9
Ω
1.3
Ω
On-Resistance Match
Between Channels
R_ON
V+ = 2.7V, VNO or VNC = 1V,
ICOM = -100mA, Test Circuit 1
+25℃
Full
0.15 0.25 Ω
0.5
Ω
On-Resistance Flatness
Source OFF Leakage
Current
Channel ON Leakage
Current
DIGITAL INPUTS
R_FLAT(ON)
V₊ = 2.7V, V_NO or V_NC = 1V, 2.5V,
ICOM = -100mA, Test Circuit 1
INC(OFF), INO(OFF)
I_NC(ON), I_NO(ON),
ICOM(ON)
V+ = 3.6V, VNO or VNC = 3.3V/0.3V,
V_COM = 0.3V/3.3V
V₊ = 3.6V, V_COM = 0.3V/3.3V,
VNO or VNC = 0.3V/3.3V or floating
+25℃
Full
Full
Full
0.15 0.25 Ω
0.35 Ω
1
μA
1
μA
Input High Voltage
V_INH
Input Low Voltage
VINL
Input Leakage Current
IIN
DYNAMIC CHARACTERISTICS
V+ = 3.6V, VIN = 0V or 3.6V
Full
1.5
Full
Full
V
0.4
V
1
μA
Turn-On Time
Turn-Off Time
t_ON
V+ = 3.3V, VNO or VNC = 2.0V,
+25℃
54
ns
tOFF
R_L = 50Ω, C_L = 35pF, Test Circuit 2
+25℃
38
ns
Charge Injection
Q
C_L = 1.0nF, V_G = 0V, R_G = 0Ω Test Circuit 3 +25℃
26
pC
Break-Before-Make
Time Delay
t_D
VNO or VNC = 1.5V, RL = 50Ω,
CL = 35pF, Test Circuit 4
+25℃
12
ns
Off Isolation
OISO
Signal = 0dBm, R_L = 50Ω,
C_L = 5pF, Test Circuit 5
f = 100kHz +25℃
f = 1MHz +25℃
-75
-55
dB
Channel-to-Channel
Crosstalk
-3dB Bandwidth
Channel ON Capacitance
XTALK
BW
C_NC(ON),
C_NO(ON),
CCOM(ON)
Signal = 0dBm, R_L = 50Ω,
C_L = 5pF, Test Circuit 6
f = 1MHz
f = 10MHz
Signal = 0dBm, R_L = 50Ω, C_L = 5pF,
Test Circuit 7
+25℃
+25℃
+25℃
f = 1MHz
+25℃
-103
-65
70
80
dB
MHz
pF
SG Micro Corp
5
www.sg-micro.com