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SGM44600_15 Datasheet, PDF (4/11 Pages) SG Micro Corp – DPDT Analog Switch
SGM44600
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
ELECTRICAL CHARACTERISTICS
(V+ = +2.7V to +3.6V, VIH = +1.6V, VIL = +0.4V, TA = -40℃ to +85℃. Typical values are at V+ = +3.0V, TA = +25℃, unless otherwise
noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN TYP MAX UNITS
ANALOG SWITCH
Analog Signal Range
On-Resistance
VNO, VNC, VCOM
RON
V+ = 2.7V, VNO or VNC = 1.2V,
ICOM = -10mA, Test Circuit 1
-40℃ to +85℃ 0
V+
V
+25℃
10 15 Ω
-40℃ to +85℃
18 Ω
On-Resistance Match
Between Channels
RON
V+ = 2.7V, VNO or VNC = 1.2V,
ICOM = -100mA, Test Circuit 1
+25℃
-40℃ to +85℃
13
Ω
4
Ω
On-Resistance Flatness
RFLAT(ON)
V+ = 2.7V, VNO or VNC = 1.2V, 4.5V,
ICOM = -100mA, Test Circuit 1
+25℃
-40℃ to +85℃
69
Ω
12 Ω
Source OFF Leakage
Current
INC(OFF), INO(OFF)
V+ = 3.6V, VNO or VNC = 3.3V/0.3V,
VCOM = 0.3V/3.3V
-40℃ to +85℃
1 μA
Channel ON Leakage
Current
DIGITAL INPUTS
INC(ON), INO(ON), V+ = 3.6V, VCOM = 0.3V/3.3V,
ICOM(ON)
VNO or VNC = 0.3V/3.3V or floating
-40℃ to +85℃
1 μA
Input High Voltage
VINH
Input Low Voltage
VINL
Input Leakage Current
IIN
DYNAMIC CHARACTERISTICS
V+ = 5.5V, VIN = 0V or 3.6V
-40℃ to +85℃ 1.5
-40℃ to +85℃
-40℃ to +85℃
V
0.4 V
1 μA
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
tON
tOFF
VIH = 1.5V, VIL= 0V, Test Circuit2
tD
VIH = 1.5V, VIL= 0V, Test Circuit4
+25℃
+25℃
+25℃
38.0
ns
45.0
ns
5.6
ns
Charge Injection
Off Isolation
Q
OISO
VG = GND, RG = 0Ω, VIH = 1.5V, VIL= 0V,
CL = 1.0nF, Q = CL × VOUT, Test Circuit3
VBIAS = 1.5V, Signal = 0dBm,
1MH
VIH = 1.5V, VIL= 0V, Test Circuit5 10MHz
+25℃
+25℃
+25℃
2.6
pC
-75
dB
-55
dB
Channel-to-Channel
Crosstalk
XTALK
VBIAS = 1.5V, Signal = 0dBm,
1MHz
VIH = 1.5V, VIL= 0V, Test Circuit6 10MHz
+25℃
+25℃
-100
dB
-60
dB
-3dB Bandwidth
Channel ON Capacitance
BW
CNC(ON),
CNO(ON),
CCOM(ON)
VBIAS = 1.5V, Signal = 0dBm,
VIH = 1.5V, VIL= 0V, Test Circuit7
+25℃
+25℃
300
MHz
43.0
pF
SG Micro Corp
4
www.sg-micro.com