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SGM8061 Datasheet, PDF (3/14 Pages) SG Micro Corp – 500MHz, Rail-to-Rail Output CMOS Operational Amplifier
MODEL
SGM8061
SGM8062
SGM8063
PACKAGE/ORDERING INFORMATION
ORDER
NUMBER
SGM8061XN5/TR
SGM8061XS/TR
SGM8062XS/TR
SGM8063XN6/TR
SGM8063XS/TR
PACKAGE
DESCRIPTION
SOT23-5
SO-8
SO-8
SOT23-6
SO-8
PACKAGE
OPTION
Tape and Reel, 3000
Tape and Reel,2500
Tape and Reel, 2500
Tape and Reel,3000
Tape and Reel,2500
MARKING
INFORMATION
8061
SGM8061XS
SGM8062XS
8063
SGM8063XS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V- .......................................... 7.5 V
Common-Mode Input Voltage
........................................ (–VS) – 0.5 Vto (+VS) +0.5V
Storage Temperature Range ................. –65℃ to +150℃
Junction Temperature .............................................. 160℃
Operating Temperature Range ............ –55℃ to +150℃
Package Thermal Resistance @ TA = 25℃
SOT23-5, θJA......................................................... 190℃/W
SOT23-6, θJA......................................................... 190℃/W
SO-8, θJA................................................................ 125℃/W
Lead Temperature Range (Soldering 10 sec)
...................................................... 260℃
ESD Susceptibility
HBM...........................................................................1000V
MM...............................................................................400V
NOTES
1. Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
CAUTION
This integrated circuit can be damaged by ESD.
Shengbang Micro-electronics recommends that all
integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage
because very small parametric changes could cause the
device not to meet its published specifications.
3
SGM8061/2/3