YGUR302TM Datasheet, PDF (4/9 Pages) Seoul Semiconductor – Surface-mounted and leadless chip LED device

1. Absolute maximum ratings
Parameter
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operation Temperature
Storage Temperature
Symbol
P_d
I_F
I_FM ^*1
V_R
T_opr.
T_stg.
*1 I_FM conditions: Pulse width Tw 0.1ms and Duty ratio 1/10
Value
66
30
60
5
-30 ~ 85
-40 ~ 100
(Ta=25 )
Unit
mW
mA
mA
V
2. Electro-Optical Characteristics
(Ta=25 )
Parameter
Symbol Condition Color Min Typ Max Unit
Forward Voltage
YG
- 2.0 2.5
V_F
I_F=20
RED
-
1.7 2.2
V
YG 1.3 -
1.8
V_FM
I_F=1 uA
RED 1.3 -
1.8
Reverse Current
YG
-
-
100
I_R
V_R=5V
RED
-
-
100
Luminous Intensity^*2
I_V
I_F=20
YG
60
-
130
RED 50
-
120 ^mcd
Wavelength
D
I_F=20
YG
- 571
-
nm
RED
- 638
-
Spectral Bandwidth
I_F=20
YG
-
30
-
nm
RED
-
30
-
Viewing Angle^*3
2 _1/2
I_F=20
YG
-
60
-
RED
-
60
-
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 _1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : I_v 10 %, _D 2 nm, V_F 0.1 V)
SSC-YGUR302TM
Revision 1.0
www.ZLED.com