YGFR411-H_12 Datasheet, PDF (4/13 Pages) Seoul Semiconductor – Surface-mounted chip LED device

2. Absolute maximum ratings
Parameter
Symbol
Value
Power Dissipation
P_d
Forward Current
I_F
Peak Forward Current
I_FM ^*1
Reverse Voltage
V_R
Operating Temperature
T_opr.
Storage Temperature
T_stg.
≤ ≤ *1 I_FM conditions: Pulse width Tw 1msec and Duty ratio 1/10.
72
30
100
5
-40 ~ 85
-40 ~ 100
℃ (Ta=25 )
Unit
mW
mA
mA
V
℃
℃
3. Electro-Optical Characteristics
℃ (Ta=25 )
Parameter Symbol Condition color Min Typ Max Unit
Forward
Voltage
Reverse
Current
Luminous
Intensity^*2
Wavelength
Spectral
Bandwidth
Viewing
Angle^*3
V_F
I_R
I_V
λ_D
Δλ
θ2 _1/2
㎃ I_F=20
V_R=5V
㎃ I_F=20
㎃ I_F=20
㎃ I_F=5
㎃ I_F=20
㎃ I_F=20
YG
1.8 2.0 2.4
V
FR
1.8 2.0 2.4
YG
-
-
10
㎂
FR
-
-
10
YG
25
35
55
mcd
FR
60 100 160
YG
568 572 576
nm
FR
615 625 635
YG
-
15
-
nm
FR
-
15
-
YG
-
120
-
˚
FR
-
120
-
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of the LED package.
θ *3 1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
λ [Note] Tolerance : Iv ± 10%, _D ± 2nm, , V_F ± 0.1V
Rev. 03
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC- QP- 7- 07- 25 (Rev.0.0)