UR101 Datasheet, PDF (4/9 Pages) Seoul Semiconductor – Surface-mounted and leadless chip LED device

1. Absolute maximum ratings
Parameter
Symbol
Power Dissipation
P_d
Forward Current
I_F
Peak Forward Current
I_FM ^*1
Reverse Voltage
V_R
Operation Temperature
T_opr.
Storage Temperature
T_stg.
*1 I_FM conditions: Pulse width Tw≤0.1ms and Duty ratio≤1/10
Value
63
30
50
5
-30 ~ 85
-40 ~ 100
(Ta=25℃)
Unit
mW
mA
mA
V
℃
℃
2. Electro-Optical Characteristics
(Ta=25℃)
Parameter
Symbol Condition Min Typ Max Unit
Forward Voltage
V_F
I_F=5 ㎃
1.6
1.8
2.1
V
IF=1 ㎂
1.3
-
1.8
Reverse Current
I_R
V_R=5V
-
-
10
㎂
Luminous Intensity^*2
Wavelength
Spectral Bandwidth
I_V
I_F=20 ㎃
40
80
140 mcd
λ_D
I_F=20 ㎃
650 660 670
nm
Δλ
I_F=20 ㎃
20
nm
Viewing Angle^*3
2θ_1/2
I_F=20 ㎃
120
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 θ_1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : I_v ±10 %, λ_D ±2 nm, V_F ±0.1 V)
Rev. 00
November 2007
www.ZLED.com
Document No. : SSC-QP-7-07-24 (Rev.00)