THBFR411 Datasheet, PDF (4/13 Pages) Seoul Semiconductor – Small size suitable for compact appliances

2. Absolute maximum ratings
Parameter
Symbol
Value
Blue
Red
Power Dissipation
P_d
74
66
Forward Current
I_F
20
30
Peak Forward Current
I_FM ^*1
50
100
Operating Temperature
T_opr.
-40 ~ 85
Storage Temperature
T_stg.
-40 ~ 100
≤ ≤ *1 I_FM conditions: Pulse width Tw 1msec and Duty ratio 1/10.
℃ (Ta=25 )
Unit
mW
mA
mA
℃
℃
3. Electro-Optical Characteristics
℃ (Ta=25 )
Parameter Symbol Condition Color
Forward
Voltage
Reverse Voltage
Reverse Current
Luminous
Intensity^*2
Wavelength
Spectral
Bandwidth
Viewing
Angle^*3
V_F
V_R
I_R
I_V
λ_D
Δλ
θ2 _1/2
㎃ I_F=20
㎃ I_F=5
V_R=5V
㎃ I_F=20
㎃ I_F=20
㎃ I_F=20
㎃ I_F=20
Blue
Red
Blue
Red
Blue
Red
Blue
Red
Blue
Red
Blue
Red
Min
2.9
1.8
0.6
-
60
60
460
615
-
-
-
-
Typ Max Unit
3.2
3.7
V
2.0
2.2
0.8
1.5
㎂
-
10
110 160
mcd
90
150
465 470
nm
625 635
20
-
nm
15
-
120
-
˚
120
-
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the
θ^{mechanical axis of the LED package.}
*3 1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
λ [Note] Tolerance : Iv ± 10%, _D ± 2nm, , V_F ± 0.1V
Rev. 02
January 2012
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서식번호 : SSC- QP- 7- 07- 25 (Rev.0.0)