HBTGFR421-S Datasheet, PDF (2/7 Pages) Seoul Semiconductor – CHIP LED DEVICE

1. Features
Full-color lighting
Package : 1.6×1.5×0.5mm, Flat molding
2. Absolute Maximum Ratings
Parameter
Symbol
Power Dissipation
P_d
Forward Current
I_F
Peak Forward Current
I_FM*1
Reverse Voltage
V_R
Operating Temperature
T_opr
Storage Temperature
T_stg
*1 I_FM conditions: Pulse width Tw≤ 0.1ms, Duty ratio≤ 1/10
Color
Value
Red
72
Green
Blue
68
Red
30
Green
Blue
20
Red
50
Green
Blue
35
5
-30 ~ +85
-40 ~ +100
(Ta=25℃)
Unit
㎽
㎃
㎃
V
℃
℃
3. Electro-optical Characteristics
(Ta=25℃)
Parameter
Symbol Condition Color Min
Typ
Max
Unit
Red
1.7
2.2
2.4
Forward Voltage
V_F
I_F=10㎃ Green
2.7
3.1
3.4
V
Blue
2.7
3.1
3.4
Red
-
0.1
10
Reverse Current
I_R
V_R=5V Green
-
0.1
10
㎂
Blue
-
0.1
10
Red
45
70
-
Luminous Intensity^*2
I_V
I_F=10㎃ Green
80
140
-
mcd
Blue
25
50
-
Dominant
Wavelength
Red
615
625
635
λ_d
I_F=20㎃ Green 510
525
530
㎚
Blue 465
470
475
Red
-
20
-
Spectral Bandwidth Δ λ
I_F=20㎃ Green
-
35
-
㎚
Blue
-
25
-
Red
-
150
-
Viewing angle^*3
2θ _1/2
I_F=20㎃ Green
-
150
-
˚
Blue
-
150
-
*2 The luminous intensity I_V is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
*3 θ _1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within
the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance: V_F ±0.1V, I_V ±10%, λ_d ±2nm)
SSC-QP-0401-06(REV.0)
SEOUL SEMICONDUCTOR CO,. LTD.
148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea
TEL: [phone] FAX: [phone]
- 2/7-
HBTGFR421-S