MMBTSC2412 Datasheet, PDF (3/4 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC2412
Fig. 1 Grounded emitter
propagation characteristics
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base to emitter voltage VBE(V)
Fig.2 Grounded emitter output
characteristics(I)
100 _Ta=25o_C
0.50mA
0.45mA
0.40mA
80
0.35mA
0.30mA
60
0.25mA
0.20mA
40
0.15mA
0.10mA
20
0.05mA
0
I B=0A
0
0.4 0.8 1.2 1.6 2.0
Collector to Emitter Voltage VCE (V)
Fig.4 DC current gain vs.
collector current (I)
500 _Ta=25o_C
200
VCE=5V
3V
1V
100
50
20
10
0.2 0.5 1 2 5 10 20 50 100 200
Collector Current Ic (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current(I)
0.5
I C/IB=10
0.2
0.1
0.05
Ta=100 ^oC
25^o C
-55 ^oC
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100200
Collector Current Ic (mA)
Fig.5 DC current gain vs.
collector current (II)
500
Ta=100 ^oC VCE=5V
200
25^o C
-55 ^oC
100
50
20
10
0.2 0.5 1 2 5 10 20 50 100 200
Collector Current Ic (mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current(II)
0.5
I C/IB=50
Ta=100 ^oC
0.2
25^o C
-55 ^oC
0.1
0.05
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100
Collector Current Ic (mA)
Fig.3 Grounded emitter output
characteristics(II)
10 _Ta=25o_C
8
30 A
27 A
24 A
21 A
6
18 A
15 A
4
12 A
9A
2
6A
3A
0
I B=0A
0
4
8
12 16 20
Collector to Emitter Voltage VCE (V)
Fig.6 Collector-emitter saturation
voltage vs. collector current
0.5
Ta=25 ^oC
0.2
I C/IB=50
20
10
0.1
0.05
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100200
Collector Current Ic (mA)
Fig.9 Gain bandwidth product vs.
emitter current
Ta=25 ^oC
500
VCE=6V
200
100
50
-0.5 -1 -2 -5 -10 -20 -50 -100
Emitter Current I E (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005