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| MMBTSC2412 Datasheet, PDF (2/4 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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MMBTSC2412
Characteristics at Tamb=25 OC
DC Current Gain
at VCE=6V, IC=1mA
Collector Base Breakdown Voltage
at IC=50µA
Collector Emitter Breakdown Voltage
at IC=1mA
Emitter Base Breakdown Voltage
at IE=50µA
Collector Cutoff Current
at VCB=60V
Emitter Cutoff Current
at VEB=7V
Collector Saturation Voltage
at IC=50mA, IB=5mA
Gain Bandwidth Product
at VCE=12V, -IE=2mA, f=100MHz
Output Capacitance
at VCE=12V, f=1MHz
Symbol
Q
hFE
R
hFE
S
hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
fT
COB
Min.
120
180
270
60
50
7
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
180
2
Max.
270
390
560
-
-
-
0.1
0.1
0.4
-
3.5
Unit
-
-
-
V
V
V
µA
µA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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