2SK1118 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver)

2SK1118
Electrical Characteristics at T_a = 25℃
Parameter
Drain-Source Breakdown Voltage
at I_D = 10 mA
Drain-Source Leakage Current
at V_DS = 600 V
Gate-Source Leakage Current
at V_GS = ± 25 V
Gate-Source Threshold Voltage
at V_DS = 10 V, I_D = 1 mA
Drain-Source On-State Resistance
at V_GS = 10 V, I_D = 3 A
Forward Transconductance
at V_DS = 10 V, I_D = 3 A
Input Capacitance
at V_DS = 10 V, f = 1 MHz
Output Capacitance
at V_DS = 10 V, f = 1 MHz
Reverse Transfer Capacitance
at V_DS = 10 V, f = 1 MHz
Turn-On Delay Time
at V_DD = 300 V, V_GS = 10 V, I_D = 3 A, R_L = 100 Ω
Turn-On Rise Time
at V_DD = 300 V, V_GS = 10 V, I_D = 3 A, R_L = 100 Ω
Turn-Off Delay Time
at V_DD = 300 V, V_GS = 10 V, I_D = 3 A, R_L = 100 Ω
Turn-Off Fall Time
at V_DD = 300 V, V_GS = 10 V, I_D = 3 A, R_L = 100 Ω
Symbol
V_(BR)DSS
Min.
600
I_DSS
-
I_GSS
-
V_GS(th)
1.5
R_DS(on)
-
g_FS
3
C_iss
-
C_oss
-
C_rss
-
t_d(on)
-
t_r
-
t_d(off)
-
t_f
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max. Unit
-
V
300
µA
± 100 nA
3.5
V
1.25
Ω
-
S
2000
pF
380
pF
120
pF
80
ns
50
ns
170
ns
40
ns
SEMTECH ELECTRONICS LTD.
®
Dated : 04/01/2016 Rev:01