2SK1118 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver)

2SK1118
N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings (T_a = 25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Power Dissipation (T_c = 25℃)
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Junction Temperature
Storage Temperature Range
TO-220 Plastic Package
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_tot
R_θJA
R_θJC
T_j
T_stg
Value
600
600
± 30
6
24
45
62.5
2.77
150
- 55 to + 150
Unit
V
V
V
A
A
W
℃/W
℃/W
℃
℃
SEMTECH ELECTRONICS LTD.
®
Dated : 04/01/2016 Rev:01