1N17 Datasheet, PDF (2/2 Pages) Rectron Semiconductor – SCHOTTKY BARRIER RECTIFIER

1N17 ~ 1N19
FIG.1-FORWARD CURRENT DERATING CURVE
1
0.75
0.5
0.25
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm)
LEAD LENGTH
0
0 20
40 60 80 100 120 140
LEAD TEMPERATURE, (^o C)
Fig.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
Tj=125 ^oC
1
Pulse Width=300 S
1% Duty Cycle
Tj=25 ^oC
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE
VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
400
100
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
10
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
10
5
0
1
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
10
100
NUMBER OF CYCLES AT 60 Hz
Fig.4- TYPICAL REVERSE CHARACTERISTICS
100
10
1
TJ=125 ^oC
0.1
TJ=75 ^oC
0.01
TJ=25 ^oC
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE,%
Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
t, PULSE DURATION,sec.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2002