1N17 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SCHOTTKY BARRIER RECTIFIER

1N17 ~ 1N19
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage – 20 to 40 Volts
R-1
Forward current – 1.0 Amperes
Features
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• High current capability low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical data
• Case: R-1 molded plastic body
• Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026
• Polarity: color band denotes cathode end
• Mounting Position: Any
Absolute Maximum Ratings and Characteristics
Ratings at 25^oC ambient temperature unless otherwise specified.
Symbols
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Non-repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current
0.375” (9.5mm) Lead Length At T_L = 90 ^OC
Peak Forward Surge Current, 8.3ms Single half sine-wave
Superimposed On Rated Load (JEDEC method) At T_L = 70 ^OC
Maximum Instantaneous Forward Voltage At 1 A
Maximum Instantaneous Forward Voltage At 3.1 A
Maximum Instantaneous Reverse Current at
Rated DC Blocking Voltage
T_A = 25^OC
T_A = 100 ^OC
Typical Thermal Resistance
Typical Junction Capacitance
V_RRM
V_RMS
V_DC
V_RSM
I_(AV)
I_FSM
V_F
V_F
I_R
R_θJA
R_θJL
C_J
Storage and Operating Junction Temperature Range
T_J ,T_S
1N17
20
14
20
24
1N18
30
21
30
36
1N19
40
28
40
48
1
25
0.45
0.550
0.60
0.75
0.875
0.90
0.5
10
50
15
110
-65 to +125
Units
Volts
Volts
Volts
Volts
Amps
Amps
Volts
Volts
mAmps
mAmps
O_C/W
pF
O_C
Notes: 1. Pulse test: 300μs pulse width, 1% duty cycle
2. Thermal resistance (from junction to ambient) Vertical P.B.C. MOUNTED, 0.5” (12.7 mm) lead length
3. Measured at 1.0MHz and reverse voltage of 4.0 volts
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2002