STD4A60S Datasheet, PDF (3/5 Pages) SemiWell Semiconductor – Sensitive Gate Triacs

Fig 1. Gate Characteristics
10¹
10⁰
10^-1
10⁰
V_GM (7V)
P_GM (1.5W)
25 ℃
I+_GT1
I -_GT1
I
-
GT3
25 ℃
I+_GT3
P_G(AV) (0.1W)
V_GD(0.2V)
10¹
10²
10³
Gate Current [mA]
Fig 3. On State Current vs.
Maximum Power Dissipation
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
π ^θ 2π
θ
360°
θ : Conduction Angle
0.5 1.0 1.5 2.0 2.5 3.0 3.5
RMS On-State Current [A]
θ = 180^o
θ = 150^o
θ = 120^o
θ = 90^o
θ = 60^o
θ = 30^o
4.0 4.5 5.0
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
35
30
25
60Hz
20
15
50Hz
10
5
0
10⁰
10¹
10²
Time (cycles)
STD4A60S
Fig 2. On-State Voltage
10²
10¹
125 ^oC
10⁰
25 ^oC
10^-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
On-State Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
130
125
120
115
110
π ^θ 2π
θ
105
360°
100
θ : Conduction Angle
θ = 30^o
θ = 60^o
θ
θ
=
=
19200^oo
θ = 150^o
θ = 180^o
95
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10³
V
+
GT1
V
-
GT1
10²
V
-
GT3
10¹
-50
V
+
GT3
0
50
100
150
Junction Temperature [^oC]
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