STD4A60S Datasheet, PDF (2/5 Pages) SemiWell Semiconductor – Sensitive Gate Triacs

STD4A60S
Electrical Characteristics
Symbol
Items
I_DRM
V_TM
I^+GT1
I
-
GT1
I
-
GT3
I^+GT3
V^+GT1
V^-GT1
V^-GT3
V^+GT3
V_GD
(dv/dt)c
I_H
R_th(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Gate Trigger Current
Ⅲ
Ⅳ
Ⅰ
Ⅱ
Gate Trigger Voltage
Ⅲ
Ⅳ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Conditions
V_D = V_DRM, Single Phase, Half Wave
T_J = 125 °C
I_T = 6 A, Inst. Measurement
V_D = 6 V, R_L=10 Ω
V_D = 6 V, R_L=10 Ω
T_J = 125 °C, V_D = 1/2 V_DRM
T_J = 125 °C, [di/dt]c = -2.0 A/ms,
V_D=2/3 V_DRM
Junction to case
Ratings
Unit
Min. Typ. Max.
─
─
1.0
mA
─
─
1.6
V
─
─
5
─
─
5
mA
─
─
5
─
8
12
─
─
1.4
─
─
1.4
V
─
─
1.4
─
1.6
2.0
0.2
─
─
V
5
─
─ V/㎲
─
─
10
mA
─
─
2.6 °C/W
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