SBP13005-O Datasheet, PDF (3/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-SwitchingNPN Power Transistor

SBP13005-O
Fig. 1 DC Current Gain
100
10
V =5V
CE
Fig. 2 Saturation Voltage
10
V (sat)
BE
1
Ic=4I
B
0.1
V (sat)
CE
1
0.01
0.01
0.1
1
10
0.01
0.1
1
10
IC[A], Collector Current
IC[A], Collector Current
Fig. 3 Power Derating
Fig. 4 Safe Operation Area
100
90
80
70
60
50
40
30
20
10
0
0
10
Icmax(pulse)
Icmax(DC)
5ms
1
0.1
0.01
25
50
75
100
125
150
175
200
1
TC[℃], Case Temperature
10
100
VCE[V], Collector Emitter Voltage
1000
Fig. 5 Collect output capacitance
1000
100
10
1
0.1
1
10
100
1000
VCB[V], Collector Base Voltage
3/4