SBP13005-O Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-SwitchingNPN Power Transistor

SemiWell Semiconductor
High Voltage Fast Switching NPN
P_Fo_eaw_tue_rr_esTransistor
◆ Very High Switching Speed
◆ Minimum lot to lot h_FE Variation
◆ Wide Reverse Bias SOA
SBP13005-O
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings (T_J = 25℃ unless otherwise specified)
Symbol
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25℃
Operation Junction Temperature
Storage Temperture
Condition
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
4.0
8.0
2.0
4.0
75
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Ratings
1.67
62.5
Oct 2008. Rev. 0
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved
Unit
℃/W
℃/W
1/4