BTA12-600B Datasheet, PDF (3/6 Pages) SemiWell Semiconductor – Bi-Directional Triode Thyristor

Fig 1. Gate Characteristics
V_GM (10V)
10¹
25 ℃
10⁰
P_GM (5W)
P_G(AV) (0.5W)
10^-1
10¹
V_GD (0.2V)
10²
10³
Gate Current [mA]
Fig 3. On State Current vs.
Maximum Power Dissipation
16
14
π ^θ 2π
12
θ
10
360°
θ : Conduction Angle
8
6
θ = 180^o
θ = 150^o
θ = 120^o
θ = 90^o
θ = 60^o
θ = 30^o
4
2
0
0
2
4
6
8
10
12
14
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
200
150
60Hz
100
50
50Hz
0
10⁰
10¹
10²
Time (cycles)
BTA12-600B
Fig 2. On-State Voltage
10²
T_J = 125 ^oC
10¹
T_J = 25 ^oC
10⁰
0.5
1.0
1.5
2.0
2.5
3.0
3.5
On-State Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
130
120
110
100
π ^θ 2π
θ
90
360°
80
θ : Conduction Angle
70
0
2
4
6
8
10
RMS On-State Current [A]
θ = 30^o
θ = 60^o
θ = 90^o
θ = 120^o
θ = 150^o
θ = 180^o
12
14
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
V
_
GT3
1
V
+
GT1
V
_
GT1
0.1
-50
0
50
100
Junction Temperature [ ^oC]
150
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