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BTA12-600B Datasheet, PDF (2/6 Pages) SemiWell Semiconductor – Bi-Directional Triode Thyristor | |||
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BTA12-600B
Electrical Characteristics
Symbol
Items
IDRM
VTM
I+GT1
I
-
GT1
I
-
GT3
V+GT1
V-GT1
V-GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
â
â
¡ Gate Trigger Current
â
¢
â
â
¡ Gate Trigger Voltage
â
¢
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Conditions
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
IT = 20 A, Inst. Measurement
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
TJ = 125 °C, VD = 1/2 VDRM
TJ = 125 °C, [di/dt]c = -6.0 A/ms,
VD=2/3 VDRM
Junction to case
Ratings
Unit
Min. Typ. Max.
â
â
2.0
mA
â
â
1.4
V
â
â
30
â
â
30
mA
â
â
30
â
â
1.5
â
â
1.5
V
â
â
1.5
0.2
â
â
V
10
â
â V/ã²
â
20
â
mA
â
â
3.3 °C/W
2/6
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