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SBP13007-S Datasheet, PDF (2/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-SwitchingNPN Power Transistor
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SBP13007-S
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
Min
ICEV
Collector Cut-off Current
( VBE = - 1.5V )
VCE = 700V
VCE = 700V
TC = 100 °C
-
VCEO(sus)
Collector-Emitter Sustaining Voltage
( IB = 0 )
IC = 10 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2.0A
IC = 5.0A
IC = 8.0A
IC = 5.0A
VBE(sat) Base-Emitter Saturation Voltage
IC = 2.0A
IC = 5.0A
IC = 5.0A
hFE
DC Current Gain
IC = 2.0A
IC = 5.0A
400
IB = 0.4A
IB = 1.0A
IB = 2.0A
-
IB = 1.0A
TC = 100 °C
IB = 0.4A
IB = 1.0A
IB = 1.0A
-
TC = 100 °C
VCE = 5V
20
VCE = 5V
5
ts
Storage Time
ton
Turn on time
IC = 5.0A
IB1 = 1.0A
TP = 25É«
VCC = 125V
IB2 = - 1.0A
-
Typ Max Units
-
1.0
5.0
mA
-
-
V
0.6
-
1.5
3.0
V
3.0
1.2
-
1.6
1.5
V
40
-
30
3.0
É«
1.6
œ Notes :
Pulse Test : Pulse width † 300ɫ, Duty cycle † 2%
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