SBP13007-S Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-SwitchingNPN Power Transistor

SemiWell Semiconductor
SBP13007-S
High Voltage Fast-Switching NPN Power Transistor
Features
- High Switching Speed
- Short storge time
- Wide Reverse Bias S.O.A
General Description
This devices is designed for high voltage, high speed switching
characteristic,especially suitable for ballast sysytem.
Symbol
1.Base Ÿ
Ÿ 2.Collector
Ÿ 3.Emitter
TO-220
Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_C
T_STG
T_J
Parameter
Collector-Emitter Voltage ( V_BE = 0 )
Collector-Emitter Voltage ( I_B = 0 )
Emitter-Base Voltage ( I_C = 0 )
Collector Current
Collector Peak Current ( t_P ģ 5 ms )
Base Current
Base Peak Current ( t_P ģ 5 ms )
Total Dissipation at T_C = 25 °C
Storage Temperature
Max. Operating Junction Temperature
123
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
June, 2006. Rev. 1
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