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| SBF13005 Datasheet, PDF (2/6 Pages) SemiWell Semiconductor – High Voltage Fast-Switching NPN Power Transistor | |||
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SBF13005
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
Min
ICEV
Collector Cut-off Current
( VBE = - 1.5V )
VCE = 700V
VCE = 700V
VCEO(sus)
Collector-Emitter Sustaining Voltage
( IB = 0 )
IC = 10 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0A
IC = 2.0A
IC = 4.0A
VBE(sat) Base-Emitter Saturation Voltage
IC = 1.0A
IC = 2.0A
hFE
DC Current Gain
IC = 1.0A
IC = 2.0A
Resistive Load
ts
Storage Time
tf
Fall Time
IC = 2.0A
IB1 = 0.4A
TP = 25ã²
Inductive Load
ts
Storage Time
tf
Fall Time
VCC = 15V
IB1 = 0.4A
L = 0.35mH
Inductive Load
ts
Storage Time
tf
Fall Time
VCC = 15V
IB1 = 0.4A
L = 0.35mH
TC = 100 °C
-
400
IB = 0.2A
IB = 0.5A
-
IB = 1.0A
IB = 0.2A
IB = 0.5A
-
VCE = 5V
10
VCE = 5V
8
VCC = 125V
IB2 = - 0.4A
-
IC = 2.0A
IB2 = - 1.0A
-
Vclamp = 300V
IC = 2.0A
IB2 = - 1.0A
Vclamp = 300V
-
TC = 100 °C
Typ Max Units
-
1.0
5.0
mA
-
-
V
0.3
-
0.5
V
1.0
-
1.2
1.6
V
-
40
-
40
2.5
4.0
ã²
0.15 0.4
1.1
2.0
ã²
0.07 0.3
1.2
3.0
ã²
0.08 0.4
â» Notes :
Pulse Test : Pulse width ⤠300ã², Duty cycle ⤠2%
2/6
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