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SBF13005 Datasheet, PDF (1/6 Pages) SemiWell Semiconductor – High Voltage Fast-Switching NPN Power Transistor | |||
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SemiWell Semiconductor
SBF13005
High Voltage Fast-Switching NPN Power Transistor
Features
â Very High Switching Speed (Typical 70ns@2.0A)
â Minimum Lot-to-Lot hFE Variation
â Low VCE(sat) (Typical 180mV@2.0A/0.5A)
â Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switch-
ing characteristic required such as lighting system, switching
regulator, inverter and deflection circuit.
Symbol
1.Base â
â 2.Collector
â 3.Emitter
TO-220F
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP ï¼ 5 ms )
Base Current
Base Peak Current ( tP ï¼ 5 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
12
3
Value
700
400
9.0
4.0
8.0
2.0
4.0
30
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Value
4.17
Units
°C/W
Oct, 2002. Rev. 1
1/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
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