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| SLVU2.8 Datasheet, PDF (2/7 Pages) Semtech Corporation – Low Voltage EPD TVS Diode For ESD and Latch-Up Protection | |||
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SLVU2.8
Electrical Parameter
Symbol
Parameter
IPP Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Reverse Stand-Off Voltage
IR
Reverse Leakage Current @ VRWM
VSB Snap-Back Voltage @ ISB
ISB Snap-Back Current
VPT Punch-Through Voltage
IPT Punch-Through Current
VBRR Reverse Breakdown Voltage @ IBRR
IBRR Reverse Breakdown Current
Electrical Characteristics
Fig2. SLVU2.8 IV Characteristic
Curve
Parameter
Symbol
Conditions
Minimum Typical Maximum Units
Reverse Stand-Off Voltage VRWM
Pin 3 to 1 or Pin 2 to 1
Punch-Through Voltage
VPT
IPT = 2uA, Pin 3 to 1
2.8
Snap-Back Voltage
VSB
ISB = 50mA, Pin 3 to 1
2.8
Reverse Leakage Current
IR
VRWM =2.8V, T=25â
Pin 3 to 1 or Pin 2 to 1
2.8
V
V
V
1
uA
Clamping Voltage
VC
IPP =2A, tP=8/20us
Pin 3 to 1
3.9
V
Clamping Voltage
VC
IPP =5A, tP=8/20us
Pin 3 to 1
7
V
Clamping Voltage
VC
IPP =24A, tP=8/20us
Pin 3 to 1
12.5
V
Clamping Voltage
VC
IPP =5A, tP=8/20us
Pin 2 to 1
8.5
V
Clamping Voltage
VC
IPP =24A, tP=8/20us
Pin 2 to 1
15
V
Junction Capacitance
Pin 3 to 1 and 2
Cj
(Pin 1 and 2 tied together)
VR =0V, f =1MHz
70
100
pF
Junction Capacitance
Pin 2 to 1 (Pin 3 N.C.)
Cj
VR =0V, f =1MHz
3.5
5
pF
.
2.
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