English
Language : 

SW1N90U Datasheet, PDF (2/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhancement mode TO-251 MOSFET
◁
SW1N90U
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
VDS=900V, VGS=0V
VDS=720V, TC=125oC
Gate to source leakage current, forward VGS=30V, VDS=0V
IGSS
Gate to source leakage current, reverse VGS=-30V, VDS=0V
On characteristics
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID =0.5A
VDS = 30 V, ID = 0.5A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=450V, ID=1A, RG=25Ω
(note 4，5)
VDS=500V, VGS=10V, ID=1A
(note 4，5)
Min.
900
3
Typ. Max. Unit
V
0.74
V/oC
1
uA
50 uA
100 nA
-100 nA
5
V
11.7
16
Ω
1.2
S
242
31
pF
11
9
22.5
nS
19.5
30
7
1.2
nC
4.4
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
VSD Diode forward voltage drop.
Trr
Reverse recovery time
Qrr
Breakdown voltage charge
Integral reverse p-n Junction
diode in the MOSFET
IS=1A, VGS=0V
IS=1A, VGS=0V,
dIF/dt=100A/us
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L =160mH, IAS = 1.0A, VDD = 100V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 1A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Min. Typ. Max. Unit
1
A
4
A
1.4 V
237
nS
654
nC
Oct. 2015. Rev. 2.0
2/6
 ▷