SW1N90U Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhancement mode TO-251 MOSFET

SW1N90U
N-channel Enhancement mode TO-251 MOSFET
Features
 High ruggedness
 R_DS(ON) (Typ 11.7Ω)@V_GS=10V
 Gate Charge (Typ 7nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED,Charger
TO-251
12 ₃
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 900V
I_D
: 1A
R_DS(ON) : 11.7Ω
2
1
3
Order Codes
Item
Sales Type
1
SW I 1N90U
Marking
SW1N90U
Package
TO-251
Packaging
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
900
1*
0.63*
4
±30
80
14
5
83
0.7
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
1.5
0.5
98
Oct. 2015. Rev. 2.0
Unit
o_C/W
o_C/W
o_C/W
1/6