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| SW070R08VT Datasheet, PDF (2/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251 MOSFET | |||
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SW070R08VT
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Off characteristics
BVDSS Drain to source breakdown voltage
ÎBVDSS Breakdown voltage temperature
/ ÎTJ coefficient
Test conditions
VGS=0V, ID=250uA
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
VDS=80V, VGS=0V
VDS=64V, TC=125oC
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Gfs
Forward transconductance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
VDS=VGS, ID=250uA
VGS=4.5V, ID=40A
VGS=10V, ID=40A
VGS=10V, ID=80A
VDS=10V, ID=30A
VGS=0V, VDS=25V, f=1MHz
VDS=40V, ID=30A, RG=25â¦,
VGS=10V
(note 4,5)
VDS=64V, VGS=10V, ID=30A
(note 4,5)
Source to drain diode ratings characteristics
Min.
80
1.3
Typ. Max. Unit
0.05
V
V/oC
1 uA
50 uA
100 nA
-100 nA
2.3 V
7.5
9.4 mâ¦
6.2
7.8 mâ¦
6.3
7.9 mâ¦
81
S
3470
569
pF
407
22
98
ns
302
223
88
10
nC
33
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=80A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=30A, VGS=0V,
dIF/dt=100A/us
â». Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L =1.2mH, IAS =30A, VDD=50V, RG=25â¦, Starting TJ = 25oC
3.
ISD ⤠30A, di/dt = 100A/us, VDD ⤠BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ⤠300us, duty cycle ⤠2%.
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Min.
Typ.
41
44
Max. Unit
80 A
320 A
1.4 V
ns
nC
Sep. 2016. Rev. 2.0
2/6
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