SW070R08VT Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251 MOSFET

SW070R08VT
N-channel Enhanced mode TO-251 MOSFET
Features
 High ruggedness
TO-251
BV_DSS : 80V
 Low R_DS(ON) (Typ 7.5mΩ)@V_GS=4.5V
(Typ 6.2mΩ)@V_GS=10V
 Low Gate Charge (Typ 88nC)
I_D
: 80A
R_DS(ON) : 7.5mΩ @V_GS=4.5V
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
1
2
3
6.2mΩ @V_GS=10V
2
Li Battery Protect Board, Inverter
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
1
3
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW I 070R08VT
SW070R08VT
TO-251
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
80
80*
50*
320
± 25
527
21
5
219
1.8
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
0.57
71.6
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0
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