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| SW036R10ES Datasheet, PDF (2/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220/TO-263 MOSFET | |||
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SW036R10ES
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Off characteristics
BVDSS Drain to source breakdown voltage
ÎBVDSS Breakdown voltage temperature
/ ÎTJ coefficient
Test conditions
VGS=0V, ID=250uA
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
VDS=100V, VGS=0V
VDS=80V, TC=125oC
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Gfs
Forward transconductance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg
Gate resistance
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VDS=VGS, ID=250uA
VGS=10V, ID=130A
VGS=10V, ID=60A
VDS=8V, ID=50A
VGS=0V, VDS=25V, f=1MHz
VDS=50V, ID=30A, RG=25â¦,
VGS=10V
(note 4,5)
VDS=80V, VGS=10V, ID=30A
(note 4,5)
VDS=0V, Scan F mode
Source to drain diode ratings characteristics
Min.
100
2
Typ. Max. Unit
0.03
V
V/oC
1 uA
50 uA
100 nA
-100 nA
4
V
3.4
4.3 mâ¦
3.3
4.2 mâ¦
129
S
9730
6620
pF
351
50
70
ns
124
58
156
43
nC
48
2.2
â¦
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=60A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=30A, VGS=0V,
dIF/dt=100A/us
â». Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L =3.96mH, IAS =30A, VDD=50V, RG=25â¦, Starting TJ = 25oC
3.
ISD ⤠30A, di/dt = 100A/us, VDD ⤠BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ⤠300us, duty cycle ⤠2%.
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Min.
Typ.
85
192
Max. Unit
130 A
520 A
1.4 V
ns
nC
Sep. 2016. Rev. 3.0
2/6
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