SW036R10ES Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220/TO-263 MOSFET

SW036R10ES
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
TO-220
TO-263
 High ruggedness
 Low R_DS(ON) (Typ 3.3mΩ)@V_GS=10V
 Low Gate Charge (Typ 156nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Battery Management,High Speed Power
Switching,Hard Switched and High Frequency Circuits
12 ₃
12 ₃
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 100V
I_D
: 130A
R_DS(ON) : 3.3mΩ
2
1
3
Item
Sales Type
Marking
Package
Packaging
1
SW P 036R10ES
SW036R10ES
TO-220
TUBE
2
SW B 036R10ES
Absolute maximum ratings
SW036R10ES
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J
T_L
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
TO-263
Value
TO-220 TO-263
100
130*
82*
520
± 20
1782
76
5
255
223
2
1.8
-55 ~ + 150
300
TUBE
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220 TO-263
0.49
0.56
55
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 3.0
1/6