SKM600GA124D Datasheet, PDF (5/6 Pages) Semikron International – low loss igbt modules

SKM 600 GA 124 D
0,1
K/W
M600GA124.XLS-19
0,1
K/W
M600GA124.XLS-20
0,01
0,001
0,0001
Z_thJC
single pulse
D=0,50
0,20
0,10
0,05
0,02
0,01
0,00001
0,00001 0,0001 0,001 0,01
t_p
0,1
1
s
0,01
0,001
D=0,5
0,2
0,1
0,05
0,02
0,01
Z_thJC
single pulse
0,0001
0,00001 0,0001 0,001 0,01
t_p
0,1
1
s
Fig. 19 Transient thermal impedance of IGBT
Z_thJC = f (t_p); D = t_p / t_c = t_p · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z_thJC = f (t_p); D = t_p / t_c = t_p · f
500
A
400
300
M600GA124.XLS-22
R_G
9_&&  9
600
7_M  ƒ&
A
4Ω
9_*( “  9
500
5Ω
400
R_G
4Ω
5Ω
M600GA124.XLS-23
9_&&  9
7_M  ƒ&
9_*( “  9
,₎  $
10 Ω
300
10 Ω
200
200
100
I_RR
100
I_RR
0
0
200
400
600
800 1000
I_F
A
0
0
2000
di_F/dt
4000
6000
8000
A/µs
Fig. 22 Typ. CAL diode peak reverse recovery
current I_RR = f (I_F; R_G)
Fig. 23 Typ. CAL diode peak reverse recovery
current I_RR = f (di_F/dt; R_G)
M600GA124.XLS-24
120
µC
R_G=
9_&&  9
I_F= _{7M  ƒ&}
100
4Ω
9_*( “  9
5
800 A
80
10 Ω
400 A
60
300 A
200 A
40
100 A
20
Q_rr
0
0 1000
di_F/dt
2000
3000
4000
5000 6000
A/µs
Fig. 24 Typ. CAL diode recovered charge
Q_RR = f (di_F/dt; I_F; R_G
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010502
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